There are three main types of commonly used production ion implanters: low energy high beam implanters, high energy implanters and medium beam implanters.
Low-energy large-beam ion implanter: The beam of the large-beam implanter can reach a few milliamps or even tens of milliamps, and the injection dose range is 10^13~10^16cm^(-2). The energy is lower than 100keV, and due to the continuous reduction of the feature size of the device, a lower energy injection is required to form a shallow or ultra-shallow junction, and the minimum energy of some large-beam injectors can reach 0.2keV.
High-energy ion implanter: The energy of high-energy implanter can be as high as several MeV, and the injection dose is 10^11~10^13cm^(-2).
Medium beam ion implanter: The injection energy of medium beam implanter is in the range of several hundred keV, and the injection dose range is larger than that of high energy implanter.
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